Date: Wednesday, November 19, 2025
Time: 11:00AM Pacific | 2:00PM Eastern
Duration: 60 mins including live Q&A
How to Test GaN and SiC MOSFET and IGBT Devices
Join Teledyne LeCroy to learn more about how to automate double-pulse testing (DPT) to qualify GaN MOSFETs, SiC MOSFETs and Si/SiC IGBTs. We’ll explain the proper use of high voltage isolated probes and describe how to use the DPT test circuit, oscilloscopes, and other benchtop test instruments to accurately, safely, effectively, and efficiently analyze your devices.
Topics to be covered in this webinar:
- Double-pulse testing example (both low and high-side of a half bridge)
- Test instrument consideration
- Testing safely
- Deskewing probes
- Switching loss, conduction loss and efficiency measurements
- Reverse recovery measurements
Who should attend? Hardware engineers, systems engineers, production engineers, technicians testing GaN MOSFETs, SiC MOSFETs and Si/SiC IGBTs.
What attendees will learn? Learn how to perform the double-pulse test safely and efficiently and how to capture and characterize your device’s dynamic response.
Presented by: Jon Shechter, Product Marketing Manager
Can’t join us live? Register now and receive the recording later.