06.12.2024 How to Test GaN and SiC MOSFET and IGBT Devices


Date: Wednesday, June 12, 2024
Time: 11AM Pacific | 2 PM Eastern
Duration: 60 minutes

How to Test GaN and SiC MOSFET and IGBT Devices

Join Teledyne LeCroy to learn more about how to test and qualify GaN MOSFETs, SIC MOSFETs and SiC IGBTs using the double-pulse test circuit and high voltage isolated probes. Learn how you can use your benchtop test instruments to effectively (and safely) analyse your circuits in a qualitative and quantitative manner.

Topics to be covered in this webinar include:

  • Double-pulse testing example (both low and high-side of a half bridge)
  • Test instrument consideration
  • Testing safely
  • Deskewing probes
  • Switching loss, conduction loss and efficiency measurements
  • Reverse recovery measurements

Who should attend? Hardware engineers, systems engineers, production engineers, technicians testing GaN MOSFETs, SiC MOSFETs and SiC IGBTs.

What attendees will learn: Attendees will learn how to perform the double-pulse test safely and how to capture and characterize your device’s dynamic response.

Presenter: William Kaunds, Product Manager, Teledyne LeCroy




Can’t attend live? Register anyway and you will receive an email with the recording and slides after the live event.